The Chinese researchers at Fudan University have developed Poxiao, the world’s fastest flash memory device, capable of erasing and rewriting data 100,000 times faster than current technology.
This breakthrough could revolutionize AI computing, data storage, and semiconductor performance, pushing technological boundaries further than ever before.
Operating at a speed of just 400 picoseconds, Poxiao eliminates bottlenecks between memory and processing, making data retrieval and execution almost instantaneous.
The device, which is smaller than a grain of rice, sets the foundation for ultra-fast computing and next-generation electronic systems.
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